Black Silicon Carbide (SiC) is an ultra-hard synthetic abrasive (Mohs 9.2) with 97.5% purity. Its exceptional thermal conductivity, sharpness, and electrical properties make it ideal for precision grinding, advanced refractories, semiconductor polishing, and high-temperature ceramics.
Black Silicon Carbide (SiC) is synthesized from quartz sand and petroleum coke at extreme temperatures. As a Grade A abrasive, it delivers 97.5% SiC purity with low impurities (Fe₂O₃ ≤0.30%, magnetic content ≤0.02%), offering superior hardness and conductivity.
Property | Value |
---|---|
SiC Content | ≥97.5% |
Mohs Hardness | 9.2 |
Melting Point | 2250°C |
Max Service Temp | 1900°C |
True Density | 3.2–3.45 g/cm³ |
Electrical Conductivity | Yes (functional abrasive) |
Grit Sizes: 16# to 220# (e.g., 24#, 46#, 80#, 120#, 220#)
Custom Sizes: Tailored cuts per FEPA, JIS, or client specs
Precision Grinding:
Grinding wheels, abrasive stones, lapping compounds.
Polishing photovoltaic wafers (mono/polycrystalline silicon).
Advanced Refractories:
High-temperature kiln parts, metallurgical deoxidizers.
Functional Ceramics:
Kiln furniture, reaction-sintered ceramics, crucibles.
Semiconductor Industry:
Wafer surface treatment, chip fabrication.
Metallurgy & Foundry:
Alloy processing, mineral separation media.
Anti-Wear Solutions:
Industrial coatings, blast media for rust removal.
Ultra-Hard Performance: Harder than fused alumina (Mohs 9.2).
Thermal Shock Resistance: Stable in rapid heating/cooling cycles.
Electrical Properties: Unique conductivity for specialized applications.
Purity Guaranteed: Consistent 97.5% SiC content.